Since the publication of the first edition of this book in 1996, CMOS manufacturing technology has continued its breathtaking pace, scaling to ever-smaller dimensions. Minimum feature sizes are now reaching the 100-nm realm. Circuits are becoming more complex, challenging the productivity of the designer, while the plunge into the deep-submicron space causes devices to behave differently and brings to the forefront a number of new issues that impact the reliability, cost, performance, power dissipation, and reliability of the digital IC. This updated text reflects the ongoing (r)evolution in the world of digital integrated circuit design, caused by this move into the deep-submicron realm. This means increased importance of deep-submicron transistor effects, interconnect, signal integrity, high-performance and low-power design, timing, and clock distribution. In contrast to the first edition, the present text focuses entirely on CMOS ICs. 

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